Nanoscale electrical characterization of a varistor-like device fabricated with oxidized CVD graphene

S. Claramunt, Q. Wu, A. Ruiz, M. Porti, C. Couso, M. Nafría, X. Aymerich, B. Sempere, C. Colominas

Producció científica: Capítol de llibreContribució a congrés/conferènciaAvaluat per experts

1 Citació (Scopus)

Resum

The electrical properties of an electron device that contains CVD graphene with oxidized grain boundaries are presented. We found that the device behaves as a varistor. The topographical and electrical properties of the graphene layer were studied at the nanoscale with CAFM and KPFM. The results confirm that the morphology and properties of the oxidized grain boundaries can be the origin for the device level characteristics and the device-to-device variability. Because of the properties of the analyzed structures, this device could be used in potential fully-2D materials based circuits.

Idioma originalAnglès
Títol de la publicacióJoint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings
EditorsAndroula G. Nassiopoulou, Panagiotis Sarafis
EditorInstitute of Electrical and Electronics Engineers Inc.
Pàgines216-219
Nombre de pàgines4
ISBN (electrònic)9781509053131
DOIs
Estat de la publicacióPublicada - 29 de juny 2017
Esdeveniment2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Athens, Greece
Durada: 3 d’abr. 20175 d’abr. 2017

Sèrie de publicacions

NomJoint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings

Conferència

Conferència2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017
País/TerritoriGreece
CiutatAthens
Període3/04/175/04/17

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