Nanoscale electrical characterization of a varistor-like device fabricated with oxidized CVD graphene

S. Claramunt, Q. Wu, A. Ruiz, M. Porti, C. Couso, M. Nafría, X. Aymerich, B. Sempere, C. Colominas

Producción científica: Capítulo del libroContribución a congreso/conferenciarevisión exhaustiva

1 Cita (Scopus)

Resumen

The electrical properties of an electron device that contains CVD graphene with oxidized grain boundaries are presented. We found that the device behaves as a varistor. The topographical and electrical properties of the graphene layer were studied at the nanoscale with CAFM and KPFM. The results confirm that the morphology and properties of the oxidized grain boundaries can be the origin for the device level characteristics and the device-to-device variability. Because of the properties of the analyzed structures, this device could be used in potential fully-2D materials based circuits.

Idioma originalInglés
Título de la publicación alojadaJoint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings
EditoresAndroula G. Nassiopoulou, Panagiotis Sarafis
EditorialInstitute of Electrical and Electronics Engineers Inc.
Páginas216-219
Número de páginas4
ISBN (versión digital)9781509053131
DOI
EstadoPublicada - 29 jun 2017
Evento2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Athens, Grecia
Duración: 3 abr 20175 abr 2017

Serie de la publicación

NombreJoint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings

Conferencia

Conferencia2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017
País/TerritorioGrecia
CiudadAthens
Período3/04/175/04/17

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