Nanoscale electrical characterization of a varistor-like device fabricated with oxidized CVD graphene

S. Claramunt, Q. Wu, A. Ruiz, M. Porti, C. Couso, M. Nafría, X. Aymerich, B. Sempere, C. Colominas

Research output: Book chapterConference contributionpeer-review

1 Citation (Scopus)

Abstract

The electrical properties of an electron device that contains CVD graphene with oxidized grain boundaries are presented. We found that the device behaves as a varistor. The topographical and electrical properties of the graphene layer were studied at the nanoscale with CAFM and KPFM. The results confirm that the morphology and properties of the oxidized grain boundaries can be the origin for the device level characteristics and the device-to-device variability. Because of the properties of the analyzed structures, this device could be used in potential fully-2D materials based circuits.

Original languageEnglish
Title of host publicationJoint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings
EditorsAndroula G. Nassiopoulou, Panagiotis Sarafis
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages216-219
Number of pages4
ISBN (Electronic)9781509053131
DOIs
Publication statusPublished - 29 Jun 2017
Event2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Athens, Greece
Duration: 3 Apr 20175 Apr 2017

Publication series

NameJoint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings

Conference

Conference2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017
Country/TerritoryGreece
CityAthens
Period3/04/175/04/17

Keywords

  • CVD graphene
  • grain boundaries
  • photooxidation
  • varistor

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