Silicon nitride films by chemical vapor deposition in fluidized bed reactors at atmospheric pressure (AP/FBR-CVD)

J. Perez-Mariano, S. Borros, J. A. Picas, A. Forn, Carles Colominas

Producción científica: Artículo en revista indizadaArtículorevisión exhaustiva

12 Citas (Scopus)

Resumen

Silicon nitride thin films with thicknesses around 1 μm were deposited on AISI316 steel by Chemical Vapor Deposition in a Fluidized Bed Reactor at Atmospheric Pressure (AP/FBR-CVD). The films were obtained by reaction of SiCl4 and NH3 in a reducing atmosphere at temperatures in the range 725-775 °C. They were amorphous and substoichiometric. Activation of the bed particles through alternating reaction steps resulted in a higher deposition rate. The formation of chromium nitride was detected for several microns beneath the film. The deposition temperature was found to have a great influence in their morphology and mechanical properties. The coatings presented hardness values up to 26 GPa.

Idioma originalInglés
Páginas (desde-hasta)1719-1723
Número de páginas5
PublicaciónSurface and Coatings Technology
Volumen200
N.º5-6
DOI
EstadoPublicada - 21 nov 2005

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