Miniature switchable millimeter-wave BiCMOS low-noise amplifier at 120/140 GHz using an HBT switch

Julio Heredia; Miquel Ribó; Lluís Pradell; Selin Tolunay Wipf; Alexander Göritz; Matthias Wietstruck; Christian Wipf; Mehmet Kaynak

doi:10.3390/mi10100632

Miniature switchable millimeter-wave BiCMOS low-noise amplifier at 120/140 GHz using an HBT switch

Julio Heredia, Miquel Ribó, Lluís Pradell, Selin Tolunay Wipf, Alexander Göritz, Matthias Wietstruck, Christian Wipf, Mehmet Kaynak

Research output: Indexed journal article › Article › peer-review

3 Citations (Scopus)

Abstract

A 120-140 GHz frequency-switchable, very compact low-noise amplifier (LNA) fabricated in a 0.13 μm SiGe:C BiCMOS technology is proposed. A single radio-frequency (RF) switch composed of three parallel hetero junction bipolar transistors (HBTs) in a common-collector configuration and a multimodal three-line microstrip structure in the input matching network are used to obtain a LNA chip of miniaturized size. A systematic design procedure is applied to obtain a perfectly balanced gain and noise figure in both frequency states (120 GHz and 140 GHz). The measured gain and noise figure are 14.2/14.2 dB and 8.2/8.2 dB at 120/140 GHz respectively, in very good agreement with circuit/electromagnetic co-simulations. The LNA chip and core areas are 0.197 mm² and 0.091 mm², respectively, which supposes an area reduction of 23.4% and 15.2% compared to other LNAs reported in this frequency band. The experimental results validate the design procedure and its analysis.

Original language	English
Article number	632
Journal	Micromachines
Volume	10
Issue number	10
DOIs	https://doi.org/10.3390/mi10100632
Publication status	Published - 1 Oct 2019
Externally published	Yes

Keywords

Frequency-reconfigurable LNA
Hetero junction bipolar transistor (HBT)
Low-noise amplifier (LNA)
Multimodal circuit
RF switch
SiGe BiCMOS

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10.3390/mi10100632

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@article{ef5b5c0976cd47ea9bd68fcef10fc457,

title = "Miniature switchable millimeter-wave BiCMOS low-noise amplifier at 120/140 GHz using an HBT switch",

abstract = "A 120-140 GHz frequency-switchable, very compact low-noise amplifier (LNA) fabricated in a 0.13 μm SiGe:C BiCMOS technology is proposed. A single radio-frequency (RF) switch composed of three parallel hetero junction bipolar transistors (HBTs) in a common-collector configuration and a multimodal three-line microstrip structure in the input matching network are used to obtain a LNA chip of miniaturized size. A systematic design procedure is applied to obtain a perfectly balanced gain and noise figure in both frequency states (120 GHz and 140 GHz). The measured gain and noise figure are 14.2/14.2 dB and 8.2/8.2 dB at 120/140 GHz respectively, in very good agreement with circuit/electromagnetic co-simulations. The LNA chip and core areas are 0.197 mm2 and 0.091 mm2, respectively, which supposes an area reduction of 23.4% and 15.2% compared to other LNAs reported in this frequency band. The experimental results validate the design procedure and its analysis.",

keywords = "Frequency-reconfigurable LNA, Hetero junction bipolar transistor (HBT), Low-noise amplifier (LNA), Multimodal circuit, RF switch, SiGe BiCMOS",

author = "Julio Heredia and Miquel Rib{\'o} and Llu{\'i}s Pradell and Wipf, {Selin Tolunay} and Alexander G{\"o}ritz and Matthias Wietstruck and Christian Wipf and Mehmet Kaynak",

note = "Publisher Copyright: {\textcopyright} 2019 by the authors.",

year = "2019",

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doi = "10.3390/mi10100632",

language = "English",

volume = "10",

journal = "Micromachines",

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T1 - Miniature switchable millimeter-wave BiCMOS low-noise amplifier at 120/140 GHz using an HBT switch

AU - Heredia, Julio

AU - Ribó, Miquel

AU - Pradell, Lluís

AU - Wipf, Selin Tolunay

AU - Göritz, Alexander

AU - Wietstruck, Matthias

AU - Wipf, Christian

AU - Kaynak, Mehmet

PY - 2019/10/1

Y1 - 2019/10/1

N2 - A 120-140 GHz frequency-switchable, very compact low-noise amplifier (LNA) fabricated in a 0.13 μm SiGe:C BiCMOS technology is proposed. A single radio-frequency (RF) switch composed of three parallel hetero junction bipolar transistors (HBTs) in a common-collector configuration and a multimodal three-line microstrip structure in the input matching network are used to obtain a LNA chip of miniaturized size. A systematic design procedure is applied to obtain a perfectly balanced gain and noise figure in both frequency states (120 GHz and 140 GHz). The measured gain and noise figure are 14.2/14.2 dB and 8.2/8.2 dB at 120/140 GHz respectively, in very good agreement with circuit/electromagnetic co-simulations. The LNA chip and core areas are 0.197 mm2 and 0.091 mm2, respectively, which supposes an area reduction of 23.4% and 15.2% compared to other LNAs reported in this frequency band. The experimental results validate the design procedure and its analysis.

AB - A 120-140 GHz frequency-switchable, very compact low-noise amplifier (LNA) fabricated in a 0.13 μm SiGe:C BiCMOS technology is proposed. A single radio-frequency (RF) switch composed of three parallel hetero junction bipolar transistors (HBTs) in a common-collector configuration and a multimodal three-line microstrip structure in the input matching network are used to obtain a LNA chip of miniaturized size. A systematic design procedure is applied to obtain a perfectly balanced gain and noise figure in both frequency states (120 GHz and 140 GHz). The measured gain and noise figure are 14.2/14.2 dB and 8.2/8.2 dB at 120/140 GHz respectively, in very good agreement with circuit/electromagnetic co-simulations. The LNA chip and core areas are 0.197 mm2 and 0.091 mm2, respectively, which supposes an area reduction of 23.4% and 15.2% compared to other LNAs reported in this frequency band. The experimental results validate the design procedure and its analysis.

KW - Frequency-reconfigurable LNA

KW - Hetero junction bipolar transistor (HBT)

KW - Low-noise amplifier (LNA)

KW - Multimodal circuit

KW - RF switch

KW - SiGe BiCMOS

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U2 - 10.3390/mi10100632

DO - 10.3390/mi10100632

M3 - Article

AN - SCOPUS:85073223202

SN - 2072-666X

VL - 10

JO - Micromachines

JF - Micromachines

IS - 10

M1 - 632

ER -

Miniature switchable millimeter-wave BiCMOS low-noise amplifier at 120/140 GHz using an HBT switch

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