A 125-143-GHz Frequency-Reconfigurable BiCMOS Compact LNA Using a Single RF-MEMS Switch

Julio Heredia; Miquel Ribó; Lluís Pradell; Selin Tolunay Wipf; Alexander Göritz; Matthias Wietstruck; Christian Wipf; Mehmet Kaynak

doi:10.1109/LMWC.2019.2906595

A 125-143-GHz Frequency-Reconfigurable BiCMOS Compact LNA Using a Single RF-MEMS Switch

Julio Heredia
, Miquel Ribó
, Lluís Pradell^*
, Selin Tolunay Wipf
, Alexander Göritz
, Matthias Wietstruck
, Christian Wipf
, Mehmet Kaynak

^*Corresponding author for this work

Research output: Indexed journal article › Article › peer-review

20 Citations (Scopus)

Abstract

In this letter, a 125-143-GHz frequency-reconfigurable BiCMOS compact low-noise amplifier (LNA) is presented for the first time. It consists of two cascode stages and was fabricated using a 0.13-μm SiGe:C BiCMOS process, which integrates RF-MEMS switches. A systematic general design procedure to obtain a balanced gain and noise figure in both frequency states is proposed. The LNA size is minimized by using only one RF-MEMS switch to select the frequency band and a multimodal three-line microstrip structure in the input matching network. The measured gain and noise figure are 18.2/16.1 and 7/7.7 dB at 125/143 GHz. The power consumption is 36.8 mW. The measured results are in good agreement with simulations.

Original language	English
Article number	8681076
Pages (from-to)	339-341
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	29
Issue number	5
DOIs	https://doi.org/10.1109/LMWC.2019.2906595
Publication status	Published - May 2019
Externally published	Yes

Keywords

Frequency-reconfigurable low-noise amplifier (LNA)
multimodal circuit
RF-MEMS switch

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10.1109/LMWC.2019.2906595

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title = "A 125-143-GHz Frequency-Reconfigurable BiCMOS Compact LNA Using a Single RF-MEMS Switch",

abstract = "In this letter, a 125-143-GHz frequency-reconfigurable BiCMOS compact low-noise amplifier (LNA) is presented for the first time. It consists of two cascode stages and was fabricated using a 0.13-μm SiGe:C BiCMOS process, which integrates RF-MEMS switches. A systematic general design procedure to obtain a balanced gain and noise figure in both frequency states is proposed. The LNA size is minimized by using only one RF-MEMS switch to select the frequency band and a multimodal three-line microstrip structure in the input matching network. The measured gain and noise figure are 18.2/16.1 and 7/7.7 dB at 125/143 GHz. The power consumption is 36.8 mW. The measured results are in good agreement with simulations.",

keywords = "Frequency-reconfigurable low-noise amplifier (LNA), multimodal circuit, RF-MEMS switch",

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note = "Publisher Copyright: {\textcopyright} 2019 IEEE.",

year = "2019",

month = may,

doi = "10.1109/LMWC.2019.2906595",

language = "English",

volume = "29",

pages = "339--341",

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AU - Heredia, Julio

AU - Ribó, Miquel

AU - Pradell, Lluís

AU - Wipf, Selin Tolunay

AU - Göritz, Alexander

AU - Wietstruck, Matthias

AU - Wipf, Christian

AU - Kaynak, Mehmet

PY - 2019/5

Y1 - 2019/5

N2 - In this letter, a 125-143-GHz frequency-reconfigurable BiCMOS compact low-noise amplifier (LNA) is presented for the first time. It consists of two cascode stages and was fabricated using a 0.13-μm SiGe:C BiCMOS process, which integrates RF-MEMS switches. A systematic general design procedure to obtain a balanced gain and noise figure in both frequency states is proposed. The LNA size is minimized by using only one RF-MEMS switch to select the frequency band and a multimodal three-line microstrip structure in the input matching network. The measured gain and noise figure are 18.2/16.1 and 7/7.7 dB at 125/143 GHz. The power consumption is 36.8 mW. The measured results are in good agreement with simulations.

AB - In this letter, a 125-143-GHz frequency-reconfigurable BiCMOS compact low-noise amplifier (LNA) is presented for the first time. It consists of two cascode stages and was fabricated using a 0.13-μm SiGe:C BiCMOS process, which integrates RF-MEMS switches. A systematic general design procedure to obtain a balanced gain and noise figure in both frequency states is proposed. The LNA size is minimized by using only one RF-MEMS switch to select the frequency band and a multimodal three-line microstrip structure in the input matching network. The measured gain and noise figure are 18.2/16.1 and 7/7.7 dB at 125/143 GHz. The power consumption is 36.8 mW. The measured results are in good agreement with simulations.

KW - Frequency-reconfigurable low-noise amplifier (LNA)

KW - multimodal circuit

KW - RF-MEMS switch

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M3 - Article

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M1 - 8681076

ER -

A 125-143-GHz Frequency-Reconfigurable BiCMOS Compact LNA Using a Single RF-MEMS Switch

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Keywords

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