Silicon nitride films by chemical vapor deposition in fluidized bed reactors at atmospheric pressure (AP/FBR-CVD)

J. Perez-Mariano; S. Borros; J. A. Picas; A. Forn; Carles Colominas

doi:10.1016/j.surfcoat.2005.08.069

Silicon nitride films by chemical vapor deposition in fluidized bed reactors at atmospheric pressure (AP/FBR-CVD)

J. Perez-Mariano, S. Borros, J. A. Picas, A. Forn, Carles Colominas^*

^*Autor corresponent d’aquest treball

Producció científica: Article en revista indexada › Article › Avaluat per experts

12 Cites (Scopus)

Resum

Silicon nitride thin films with thicknesses around 1 μm were deposited on AISI316 steel by Chemical Vapor Deposition in a Fluidized Bed Reactor at Atmospheric Pressure (AP/FBR-CVD). The films were obtained by reaction of SiCl₄ and NH₃ in a reducing atmosphere at temperatures in the range 725-775 °C. They were amorphous and substoichiometric. Activation of the bed particles through alternating reaction steps resulted in a higher deposition rate. The formation of chromium nitride was detected for several microns beneath the film. The deposition temperature was found to have a great influence in their morphology and mechanical properties. The coatings presented hardness values up to 26 GPa.

Idioma original	Anglès
Pàgines (de-a)	1719-1723
Nombre de pàgines	5
Revista	Surface and Coatings Technology
Volum	200
Número	5-6
DOIs	https://doi.org/10.1016/j.surfcoat.2005.08.069
Estat de la publicació	Publicada - 21 de nov. 2005
Esdeveniment	International Conference on Metallurgical Coatings and Thin Films, ICMCTF 2005 - San Diego, CA, United States Durada: 2 de gen. 2005 → 6 de gen. 2005

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@article{b17c2878fe574c5686590633b54eed30,

title = "Silicon nitride films by chemical vapor deposition in fluidized bed reactors at atmospheric pressure (AP/FBR-CVD)",

abstract = "Silicon nitride thin films with thicknesses around 1 μm were deposited on AISI316 steel by Chemical Vapor Deposition in a Fluidized Bed Reactor at Atmospheric Pressure (AP/FBR-CVD). The films were obtained by reaction of SiCl4 and NH3 in a reducing atmosphere at temperatures in the range 725-775 °C. They were amorphous and substoichiometric. Activation of the bed particles through alternating reaction steps resulted in a higher deposition rate. The formation of chromium nitride was detected for several microns beneath the film. The deposition temperature was found to have a great influence in their morphology and mechanical properties. The coatings presented hardness values up to 26 GPa.",

keywords = "Chemical Vapor Deposition, FBR-CVD, Fluidized bed, Silicon nitride",

author = "J. Perez-Mariano and S. Borros and Picas, \{J. A.\} and A. Forn and Carles Colominas",

note = "Funding Information: The authors wish to thank the following companies and institutions for their collaboration: Institut Qu{\'i}mic de Sarri{\`a}, SRI International and Tratamientos T{\'e}rmicos Carreras. JP gratefully aknowledges the financial support of DURSI (Generalitat de Catalunya) and European Social Fund. CC and JP would like to express their gratitude to Dr. A. Sanjurjo and Dr. K.H. Lau (SRI International) for their continuous support and helpful suggestions.; International Conference on Metallurgical Coatings and Thin Films, ICMCTF 2005 ; Conference date: 02-01-2005 Through 06-01-2005",

year = "2005",

month = nov,

day = "21",

doi = "10.1016/j.surfcoat.2005.08.069",

language = "English",

volume = "200",

pages = "1719--1723",

journal = "Surface and Coatings Technology",

issn = "0257-8972",

publisher = "Elsevier B.V.",

number = "5-6",

}

TY - JOUR

T1 - Silicon nitride films by chemical vapor deposition in fluidized bed reactors at atmospheric pressure (AP/FBR-CVD)

AU - Perez-Mariano, J.

AU - Borros, S.

AU - Picas, J. A.

AU - Forn, A.

AU - Colominas, Carles

N1 - Funding Information: The authors wish to thank the following companies and institutions for their collaboration: Institut Químic de Sarrià, SRI International and Tratamientos Térmicos Carreras. JP gratefully aknowledges the financial support of DURSI (Generalitat de Catalunya) and European Social Fund. CC and JP would like to express their gratitude to Dr. A. Sanjurjo and Dr. K.H. Lau (SRI International) for their continuous support and helpful suggestions.

PY - 2005/11/21

Y1 - 2005/11/21

N2 - Silicon nitride thin films with thicknesses around 1 μm were deposited on AISI316 steel by Chemical Vapor Deposition in a Fluidized Bed Reactor at Atmospheric Pressure (AP/FBR-CVD). The films were obtained by reaction of SiCl4 and NH3 in a reducing atmosphere at temperatures in the range 725-775 °C. They were amorphous and substoichiometric. Activation of the bed particles through alternating reaction steps resulted in a higher deposition rate. The formation of chromium nitride was detected for several microns beneath the film. The deposition temperature was found to have a great influence in their morphology and mechanical properties. The coatings presented hardness values up to 26 GPa.

AB - Silicon nitride thin films with thicknesses around 1 μm were deposited on AISI316 steel by Chemical Vapor Deposition in a Fluidized Bed Reactor at Atmospheric Pressure (AP/FBR-CVD). The films were obtained by reaction of SiCl4 and NH3 in a reducing atmosphere at temperatures in the range 725-775 °C. They were amorphous and substoichiometric. Activation of the bed particles through alternating reaction steps resulted in a higher deposition rate. The formation of chromium nitride was detected for several microns beneath the film. The deposition temperature was found to have a great influence in their morphology and mechanical properties. The coatings presented hardness values up to 26 GPa.

KW - Chemical Vapor Deposition

KW - FBR-CVD

KW - Fluidized bed

KW - Silicon nitride

UR - https://www.scopus.com/pages/publications/28944444848

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U2 - 10.1016/j.surfcoat.2005.08.069

DO - 10.1016/j.surfcoat.2005.08.069

M3 - Article

AN - SCOPUS:28944444848

SN - 0257-8972

VL - 200

SP - 1719

EP - 1723

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

IS - 5-6

T2 - International Conference on Metallurgical Coatings and Thin Films, ICMCTF 2005

Y2 - 2 January 2005 through 6 January 2005

ER -

Silicon nitride films by chemical vapor deposition in fluidized bed reactors at atmospheric pressure (AP/FBR-CVD)

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