Silicon nitride films by chemical vapor deposition in fluidized bed reactors at atmospheric pressure (AP/FBR-CVD)

J. Perez-Mariano, S. Borros, J. A. Picas, A. Forn, Carles Colominas

Producció científica: Article en revista indexadaArticleAvaluat per experts

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Resum

Silicon nitride thin films with thicknesses around 1 μm were deposited on AISI316 steel by Chemical Vapor Deposition in a Fluidized Bed Reactor at Atmospheric Pressure (AP/FBR-CVD). The films were obtained by reaction of SiCl4 and NH3 in a reducing atmosphere at temperatures in the range 725-775 °C. They were amorphous and substoichiometric. Activation of the bed particles through alternating reaction steps resulted in a higher deposition rate. The formation of chromium nitride was detected for several microns beneath the film. The deposition temperature was found to have a great influence in their morphology and mechanical properties. The coatings presented hardness values up to 26 GPa.

Idioma originalAnglès
Pàgines (de-a)1719-1723
Nombre de pàgines5
RevistaSurface and Coatings Technology
Volum200
Número5-6
DOIs
Estat de la publicacióPublicada - 21 de nov. 2005

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