A 125-143-GHz Frequency-Reconfigurable BiCMOS Compact LNA Using a Single RF-MEMS Switch

Julio Heredia; Miquel Ribó; Lluís Pradell; Selin Tolunay Wipf; Alexander Göritz; Matthias Wietstruck; Christian Wipf; Mehmet Kaynak

doi:10.1109/LMWC.2019.2906595

A 125-143-GHz Frequency-Reconfigurable BiCMOS Compact LNA Using a Single RF-MEMS Switch

Julio Heredia, Miquel Ribó, Lluís Pradell, Selin Tolunay Wipf, Alexander Göritz, Matthias Wietstruck, Christian Wipf, Mehmet Kaynak

Producció científica: Article en revista indexada › Article › Avaluat per experts

15 Cites (Scopus)

Resum

In this letter, a 125-143-GHz frequency-reconfigurable BiCMOS compact low-noise amplifier (LNA) is presented for the first time. It consists of two cascode stages and was fabricated using a 0.13-μm SiGe:C BiCMOS process, which integrates RF-MEMS switches. A systematic general design procedure to obtain a balanced gain and noise figure in both frequency states is proposed. The LNA size is minimized by using only one RF-MEMS switch to select the frequency band and a multimodal three-line microstrip structure in the input matching network. The measured gain and noise figure are 18.2/16.1 and 7/7.7 dB at 125/143 GHz. The power consumption is 36.8 mW. The measured results are in good agreement with simulations.

Idioma original	Anglès
Número d’article	8681076
Pàgines (de-a)	339-341
Nombre de pàgines	3
Revista	IEEE Microwave and Wireless Components Letters
Volum	29
Número	5
DOIs	https://doi.org/10.1109/LMWC.2019.2906595
Estat de la publicació	Publicada - de maig 2019
Publicat externament	Sí

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@article{0b59818f9e434b05b998630afef1debb,

title = "A 125-143-GHz Frequency-Reconfigurable BiCMOS Compact LNA Using a Single RF-MEMS Switch",

abstract = "In this letter, a 125-143-GHz frequency-reconfigurable BiCMOS compact low-noise amplifier (LNA) is presented for the first time. It consists of two cascode stages and was fabricated using a 0.13-μm SiGe:C BiCMOS process, which integrates RF-MEMS switches. A systematic general design procedure to obtain a balanced gain and noise figure in both frequency states is proposed. The LNA size is minimized by using only one RF-MEMS switch to select the frequency band and a multimodal three-line microstrip structure in the input matching network. The measured gain and noise figure are 18.2/16.1 and 7/7.7 dB at 125/143 GHz. The power consumption is 36.8 mW. The measured results are in good agreement with simulations.",

keywords = "Frequency-reconfigurable low-noise amplifier (LNA), multimodal circuit, RF-MEMS switch",

author = "Julio Heredia and Miquel Rib{\'o} and Llu{\'i}s Pradell and Wipf, {Selin Tolunay} and Alexander G{\"o}ritz and Matthias Wietstruck and Christian Wipf and Mehmet Kaynak",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.",

year = "2019",

month = may,

doi = "10.1109/LMWC.2019.2906595",

language = "English",

volume = "29",

pages = "339--341",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - A 125-143-GHz Frequency-Reconfigurable BiCMOS Compact LNA Using a Single RF-MEMS Switch

AU - Heredia, Julio

AU - Ribó, Miquel

AU - Pradell, Lluís

AU - Wipf, Selin Tolunay

AU - Göritz, Alexander

AU - Wietstruck, Matthias

AU - Wipf, Christian

AU - Kaynak, Mehmet

PY - 2019/5

Y1 - 2019/5

N2 - In this letter, a 125-143-GHz frequency-reconfigurable BiCMOS compact low-noise amplifier (LNA) is presented for the first time. It consists of two cascode stages and was fabricated using a 0.13-μm SiGe:C BiCMOS process, which integrates RF-MEMS switches. A systematic general design procedure to obtain a balanced gain and noise figure in both frequency states is proposed. The LNA size is minimized by using only one RF-MEMS switch to select the frequency band and a multimodal three-line microstrip structure in the input matching network. The measured gain and noise figure are 18.2/16.1 and 7/7.7 dB at 125/143 GHz. The power consumption is 36.8 mW. The measured results are in good agreement with simulations.

AB - In this letter, a 125-143-GHz frequency-reconfigurable BiCMOS compact low-noise amplifier (LNA) is presented for the first time. It consists of two cascode stages and was fabricated using a 0.13-μm SiGe:C BiCMOS process, which integrates RF-MEMS switches. A systematic general design procedure to obtain a balanced gain and noise figure in both frequency states is proposed. The LNA size is minimized by using only one RF-MEMS switch to select the frequency band and a multimodal three-line microstrip structure in the input matching network. The measured gain and noise figure are 18.2/16.1 and 7/7.7 dB at 125/143 GHz. The power consumption is 36.8 mW. The measured results are in good agreement with simulations.

KW - Frequency-reconfigurable low-noise amplifier (LNA)

KW - multimodal circuit

KW - RF-MEMS switch

UR - http://www.scopus.com/inward/record.url?scp=85065605034&partnerID=8YFLogxK

U2 - 10.1109/LMWC.2019.2906595

DO - 10.1109/LMWC.2019.2906595

M3 - Article

AN - SCOPUS:85065605034

SN - 1531-1309

VL - 29

SP - 339

EP - 341

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 5

M1 - 8681076

ER -

A 125-143-GHz Frequency-Reconfigurable BiCMOS Compact LNA Using a Single RF-MEMS Switch

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